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However An additional vital progression to focus on in the first 2 nm transistor is our progress of a different multi-threshold-voltage (Multi-Vt) device offering with leakage levels spanning 3 orders of magnitude.Since the future iPhones will most likely be introduced in September, It can be Protected to assume that the main 2nm A-collection chip

BDI requires the introduction of a dielectric layer beneath each the resource and drain gate regions. The main advantages of employing a full BDI scheme is to reduce sub-channel leakage, immunity to process variation and power-performance advancement.By combining this new dry inner spacer method with the industry’s first base dielectric isolation